| PART |
Description |
Maker |
| FP210L100-22 FP210-L-100-22 |
Differential Magnetoresistive Sensor ？差分磁阻传感器
|
Omron Electronics, LLC
INFINEON[Infineon Technologies AG]
|
| FP212D250-22 Q65212-D2504 FP212D25 |
Differential Magnetoresistive Sensor
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| FP212L100-22 Q65212-L1004 FP212L10 |
Differential Magnetoresistive Sensor 差分磁阻传感
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MR0A16A MR2A16AYS35 MR2A16AVYS35 MR0A16AYS35 MR1A1 |
64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM 64Kx 16位的3.3V异步磁阻随机存取内存
64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM 64K的x 16位的3.3V异步磁阻随机存取内存
|
飞思卡尔半导体(中国)有限公司
|
| MS-0082 |
Semiconductor Magnetoresistive Element
|
Asahi Kasei Microsystem...
|
| HMC1002 |
Magnetoresistive Sensor 磁阻传感
|
Honeywell International, Inc.
|
| SM353LT |
Magnetoresistive Sensor ICs
|
Honeywell Accelerometer...
|
| MZTK06N1001/KS35 |
MAGNETIC FIELD SENSOR-MAGNETORESISTIVE, 4mT
|
Integrated Circuit Technology Corp
|
| MR2A16A |
256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
|
ETC[ETC]
|
| MZTK06P1012/KS35D |
MAGNETIC FIELD SENSOR-MAGNETORESISTIVE, 2-2mT, 200mA, RECTANGULAR
|
Cornell Dubilier Electronics, Inc.
|
| MZCK03P1011/KS35D |
MAGNETIC FIELD SENSOR-MAGNETORESISTIVE, 4-4mT, 200mA, PA66
|
ITT, Corp.
|
| LTC2410IGN LTC241009 LTC2410CGN |
24-Bit No Latency DSTM ADC with Differential Input and Differential Reference
|
Linear Technology
|
